ELECTRON-SPIN-RESONANCE STUDIES ON SPUTTERED AMORPHOUS SI-C, SI-GE AND GE-C FILMS

被引：62

作者：

SHIMIZU, T

KUMEDA, M

KIRIYAMA, Y

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 37卷 / 09期

关键词：

D O I：

10.1016/0038-1098(81)91081-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：699 / 703

页数：5

共 13 条

[1] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

BRODSKY, MH ;

TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

[2] SPIN-RESONANCE SPECTROSCOPY OF AMORPHOUS-CARBON FILMS [J].

GAMBINO, RJ ;

THOMPSON, JA .

SOLID STATE COMMUNICATIONS, 1980, 34 (01) :15-18

[3] SPONTANEOUS INCLUSION OF OXYGEN IN SPUTTER-DEPOSITED AMORPHOUS-SILICON DURING AND AFTER FABRICATION [J].

IMURA, T ;

USHITA, K ;

HIRAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :L65-L68

[4] ELECTRON-SPIN RESONANCE OF AMORPHOUS SI-GE ALLOYS [J].

KUMEDA, M ;

JINNO, Y ;

SHIMIZU, T .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 81 (01) :K71-K74

[5] ELECTRON-SPIN RESONANCE IN AMORPHOUS-GERMANIUM AND SILICON [J].

MOVAGHAR, B ;

SCHWEITZER, L ;

OVERHOF, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (06) :683-702

[6] INFLUENCE OF DEPOSITION CONDITIONS ON SPUTTER-DEPOSITED AMORPHOUS SILICON [J].

PAWLEWICZ, WT .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5595-5601

[7] INFLUENCE OF OXYGEN AND DEPOSITION CONDITIONS ON RF-SPUTTERED AMORPHOUS SI FILMS [J].

SHIMIZU, T ;

KUMEDA, M ;

WATANABE, I ;

KAMONO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (10) :1923-1929

[8] INFLUENCE OF OXYGEN AND DEPOSITION CONDITIONS ON SPUTTERED A-SI [J].

SHIMIZU, T ;

KUMEDA, M ;

WATANABE, I ;

KAMONO, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :303-308

[9] PROPERTIES OF AMORPHOUS SI PREPARED BY RF SPUTTERING WITH A HIGH AR PRESSURE [J].

SHIMIZU, T ;

KUMEDA, M ;

WATANABE, I ;

KIRIYAMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L235-L238

[10]

STUKE J, 1977, 7TH P INT C AM LIQ S, P406

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