INFLUENCE OF DEPOSITION CONDITIONS ON SPUTTER-DEPOSITED AMORPHOUS SILICON

[1] BRODSKY MH, 1970, PHYS REV B, V1, P2631

[2] AMORPHOUS SILICON SOLAR-CELL [J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 671 - 673

[3] CARLSON DE, 1976, 18TH ANN EL MAT C SA

[4] CARLSON DE, 1976, 12TH PHOT SPEC C BAT

[5] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &

[6] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 787 - 804

[7] EFFECT OF HYDROGEN ON AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (11) : 1049 - 1051

[8] ELECTRICAL PROPERTIES AND ANISOTROPY IN AMORPHOUS SI AND SI0.5 GE0.5 ALLOY [J]. PHYSICAL REVIEW B, 1973, 8 (08): : 3817 - 3823

[9] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (08) : 509 - &

[10] CONDUCTIVITY AND THERMOELECTRIC-POWER OF AMORPHOUS-GERMANIUM AND AMORPHOUS SILICON [J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2565 - 2575

[1] BRODSKY MH, 1970, PHYS REV B, V1, P2631

[2] AMORPHOUS SILICON SOLAR-CELL [J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 671 - 673

[3] CARLSON DE, 1976, 18TH ANN EL MAT C SA

[4] CARLSON DE, 1976, 12TH PHOT SPEC C BAT

[5] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &

[6] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 787 - 804

[7] EFFECT OF HYDROGEN ON AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (11) : 1049 - 1051

[8] ELECTRICAL PROPERTIES AND ANISOTROPY IN AMORPHOUS SI AND SI0.5 GE0.5 ALLOY [J]. PHYSICAL REVIEW B, 1973, 8 (08): : 3817 - 3823

[9] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (08) : 509 - &

[10] CONDUCTIVITY AND THERMOELECTRIC-POWER OF AMORPHOUS-GERMANIUM AND AMORPHOUS SILICON [J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2565 - 2575