INFLUENCE OF OXYGEN AND DEPOSITION CONDITIONS ON SPUTTERED A-SI

被引:13
作者
SHIMIZU, T
KUMEDA, M
WATANABE, I
KAMONO, K
机构
关键词
D O I
10.1016/0022-3093(80)90611-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:303 / 308
页数:6
相关论文
共 7 条
[1]   NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J].
FISCH, R ;
LICCIARDELLO, DC .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :889-891
[2]   INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J].
KAISER, W ;
KECK, PH ;
LANGE, CF .
PHYSICAL REVIEW, 1956, 101 (04) :1264-1268
[3]   PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J].
MOUSTAKAS, TD ;
ANDERSON, DA ;
PAUL, W .
SOLID STATE COMMUNICATIONS, 1977, 23 (03) :155-158
[4]  
OHGAWARA R, 1961, KAGAKU RYOIKI EXTRA, P127
[5]   INFLUENCE OF DEPOSITION CONDITIONS ON SPUTTER-DEPOSITED AMORPHOUS SILICON [J].
PAWLEWICZ, WT .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5595-5601
[6]  
SHIMIZU T, UNPUBLISHED
[7]  
TSAI CC, 1977, 7TH P INT C AM LIQ S, P339