PROPERTIES OF AMORPHOUS SI PREPARED BY RF SPUTTERING WITH A HIGH AR PRESSURE

被引：28

作者：

SHIMIZU, T

KUMEDA, M

WATANABE, I

KIRIYAMA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 05期

关键词：

D O I：

10.1143/JJAP.19.L235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L235 / L238

页数：4

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[1] IMPORTANCE OF ARGON PRESSURE IN THE PREPARATION OF RF-SPUTTERED AMORPHOUS SILICON-HYDROGEN ALLOYS
ANDERSON, DA
MODDEL, G
PAESLER, MA
PAUL, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 906 - 912
[2] INFRARED VIBRATIONAL-SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICON
FREEMAN, EC
PAUL, W
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4288 - 4300
[3] SPONTANEOUS INCLUSION OF OXYGEN IN SPUTTER-DEPOSITED AMORPHOUS-SILICON DURING AND AFTER FABRICATION
IMURA, T
USHITA, K
HIRAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L65 - L68
[4] NEW ESR INVESTIGATION OF CLEAVED-SILICON SURFACE
KAPLAN, D
LEPINE, D
PETROFF, Y
THIRRY, P
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (20) : 1376 - 1379
[5] DEFECTS IN PLASMA-DEPOSITED A-SI-H
KNIGHTS, JC
LUCOVSKY, G
NEMANICH, RJ
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 393 - 403
[6] SPECTROSCOPIC EVIDENCE FOR VALENCE-ALTERNATION-PAIR DEFECT STATES IN VITREOUS SIO2
LUCOVSKY, G
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (06): : 513 - 530
[7] Mott NF, 1979, ELECT PROCESSES NONC, P32
[8] SPUTTERED HYDROGENATED AMORPHOUS SILICON
MOUSTAKAS, TD
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) : 391 - 435
[9] NEUFVILLE JPD, 1979, 8TH P INT C AM LIQ S
[10] INFLUENCE OF DEPOSITION CONDITIONS ON SPUTTER-DEPOSITED AMORPHOUS SILICON
PAWLEWICZ, WT
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5595 - 5601