SPONTANEOUS INCLUSION OF OXYGEN IN SPUTTER-DEPOSITED AMORPHOUS-SILICON DURING AND AFTER FABRICATION

被引：30

作者：

IMURA, T

USHITA, K

HIRAKI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 02期

关键词：

D O I：

10.1143/JJAP.19.L65

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L65 / L68

页数：4

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