NEW ESR INVESTIGATION OF CLEAVED-SILICON SURFACE

被引：41

作者：

KAPLAN, D

LEPINE, D

PETROFF, Y

THIRRY, P

机构：

[1] THOMSON CSF, LAB CENT RECH, 91401 ORSAY, FRANCE

[2] ECOLE POLYTECH PALAISEAU, LAB PHYS MATIERE CONDENSEE, 91120 PALAISEAU, FRANCE

[3] UNIV PARIS 06, LAB PHYS SOLIDES, 75005 PARIS, FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1975年 / 35卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.35.1376

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1376 / 1379

页数：4

共 18 条

[1] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE
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[J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &
[2] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI
CHIAROTTI, G
NANNARONE, S
PASTORE, R
CHIARADIA, P
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +
[3] EFFECTS OF BULK DOPING ON ESR SIGNAL OF CLEAN SI SURFACES
CHUNG, MF
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (02) : 475 - &
[4] PROPERTIES OF CLEAN SILICON SURFACES BY PARAMAGNETIC RESONANCE
CHUNG, MF
HANEMAN, D
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1879 - &
[5] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON
CROWDER, BL
TITLE, RS
BRODSKY, MH
PETTIT, GD
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &
[6] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS
EASTMAN, DE
GROBMAN, WD
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &
[7] ELECTRON PARAMAGNETIC RESONANCE FROM CLEAN SINGLE-CRYSTAL CLEAVAGE SURFACES OF SILICON
HANEMAN, D
[J]. PHYSICAL REVIEW, 1968, 170 (03): : 705 - &
[8] MONCH W, 1973, FESTKORPERPROBLEME, V13, P241
[9] OXYGEN ADSORPTION ON SILICON SURFACES OBSERVED VIA ELECTRON SPIN RESONANCE
MULLER, KA
SPARNAAY, MJ
CHAN, P
KLEINER, R
OVENALL, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2254 - &
[10] DETERMINATION OF SURFACE STATES AT CLEAN, CLEAVED SILICON SURFACES FROM PHOTOCONDUCTIVITY
MULLER, W
MONCH, W
[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (05) : 250 - &

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