DETERMINATION OF SURFACE STATES AT CLEAN, CLEAVED SILICON SURFACES FROM PHOTOCONDUCTIVITY

[1] COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 597 - &

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[3] SURFACE STATES ON CLEAVED (111) SILICON SURFACES [J]. SURFACE SCIENCE, 1966, 4 (04) : 353 - &

[4] Fan H. Y., 1970, Radiation Effects, P7, DOI 10.1080/00337577008234957

[5] EXACT SOLUTION OF A BOLTZMANN-EQUATION MODEL FOR OSCILLATORY PHOTOCONDUCTIVITY [J]. PHYSICAL REVIEW B, 1970, 2 (02): : 418 - &

[6] FRANKL DR, 1967, ELECTRICAL PROPERTIE

[7] HEILAND G, 1964, FESTKORPERPROBLEME, V3, P125

[8] LEITFAHIGKEIT UND FELDEFFEKT REINER SILIZIUMSPALTFLACHEN [J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 833 - &

[9] JEANES MR, 1971, 31 P C PHYS EL WASH

[10] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[1] COMPARISON OF PHOTOELECTRIC PROPERTIES OF CLEAVED HEATED + SPUTTERED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 597 - &

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &

[3] SURFACE STATES ON CLEAVED (111) SILICON SURFACES [J]. SURFACE SCIENCE, 1966, 4 (04) : 353 - &

[4] Fan H. Y., 1970, Radiation Effects, P7, DOI 10.1080/00337577008234957

[5] EXACT SOLUTION OF A BOLTZMANN-EQUATION MODEL FOR OSCILLATORY PHOTOCONDUCTIVITY [J]. PHYSICAL REVIEW B, 1970, 2 (02): : 418 - &

[6] FRANKL DR, 1967, ELECTRICAL PROPERTIE

[7] HEILAND G, 1964, FESTKORPERPROBLEME, V3, P125

[8] LEITFAHIGKEIT UND FELDEFFEKT REINER SILIZIUMSPALTFLACHEN [J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 833 - &

[9] JEANES MR, 1971, 31 P C PHYS EL WASH

[10] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302