EXACT SOLUTION OF A BOLTZMANN-EQUATION MODEL FOR OSCILLATORY PHOTOCONDUCTIVITY

被引：8

作者：

FOLLAND, NO

机构：

来源：

PHYSICAL REVIEW B | 1970年 / 2卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.2.418

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：418 / &

共 7 条

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[2] SHAPES OF 2-PHONON RECOMBINATION PEAKS IN SILICON
FOLLAND, NO
[J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1648 - &
[3] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING
HERRING, C
VOGT, E
[J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961
[4] EVIDENCE OF INTERVALLEY SCATTERING OF ELECTRONS IN EXTRINSIC PHOTOCONDUCTIVITY OF N-TYPE SILICON
ONTON, A
[J]. PHYSICAL REVIEW LETTERS, 1969, 22 (07) : 288 - &
[5] THEORY OF OSCILLATORY PHOTOCONDUCTIVITY IN SEMICONDUCTORS - BOLTZMANN-EQUATION APPROACH
STOCKER, HJ
KAPLAN, H
[J]. PHYSICAL REVIEW, 1966, 150 (02): : 619 - &
[6] OSCILLATORY PHOTOCONDUCTIVITY IN INSB
STOCKER, HJ
LEVINSTEIN, H
STANNARD, CR
[J]. PHYSICAL REVIEW, 1966, 150 (02): : 613 - +
[7] STOCKER HJ, 1966, PHYS REV, V150, P614