EVIDENCE OF INTERVALLEY SCATTERING OF ELECTRONS IN EXTRINSIC PHOTOCONDUCTIVITY OF N-TYPE SILICON

被引：45

作者：

ONTON, A

机构：

[1] IBM Watson Research Center, Yorktown Heights

来源：

PHYSICAL REVIEW LETTERS | 1969年 / 22卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.22.288

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The extrinsic photoconductivity of n-type silicon has revealed dips in its spectral response due to transfer of electrons among the equivalent conduction-band valleys by intervalley phonon emission. Intervalley LA phonons of energy 26.9 and 47.4 meV (±0.5 meV) are observed to contribute approximately equally to the total scattering of electrons. © 1969 The American Physical Society.

引用

页码：288 / &

共 16 条

[1] EFFECT OF UNIAXIAL STRESS ON EXICTATION SPECTRA OF DONORS IN SILICON
AGGARWAL, RL
RAMDAS, AK
[J]. PHYSICAL REVIEW, 1965, 137 (2A): : A602 - &
[2] AGGARWAL RL, 1965, THESIS PURDUE U
[3] BENOIT C, 1963, J PHYS CHEM SOLIDS, V24, P383
[4] LATTICE VIBRATIONS IN SILICON AND GERMANIUM
BROCKHOUSE, BN
[J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258
[5] INFRARED PHOTOCONDUCTIVITY DUE TO NEUTRAL IMPURITIES IN SILICON
BURSTEIN, E
OBERLY, JJ
DAVISSON, JW
[J]. PHYSICAL REVIEW, 1953, 89 (01): : 331 - 332
[6] 2-PHONON INDIRECT TRANSITIONS AND LATTICE SCATTERING IN SI
DUMKE, WP
[J]. PHYSICAL REVIEW, 1960, 118 (04): : 938 - 939
[7] DUMKE WP, PRIVATE COMMUNICATIO
[8] OSCILLATORY INTRINSIC PHOTOCONDUCTIVITY OF GASB + INSB
HABEGGER, MA
FAN, HY
[J]. PHYSICAL REVIEW LETTERS, 1964, 12 (04) : 99 - &
[9] INFRARED ABSORPTION OF OXYGEN IN SILICON
HROSTOWSKI, HJ
KAISER, RH
[J]. PHYSICAL REVIEW, 1957, 107 (04): : 966 - 972
[10] THEORY OF DONOR STATES IN SILICON
KOHN, W
LUTTINGER, JM
[J]. PHYSICAL REVIEW, 1955, 98 (04): : 915 - 922

← 1 2 →