2-PHONON INDIRECT TRANSITIONS AND LATTICE SCATTERING IN SI

[1] BARDEEN, 1956, 1954 P C PHOT ATL CI

[2] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[3] HAYNES J, COMMUNICATION

[4] ANALYSIS OF INTRINSIC RECOMBINATION RADIATION FROM SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 392 - 396

[5] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961

[6] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[7] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[8] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J]. PHYSICAL REVIEW, 1954, 93 (06): : 1204 - 1206

[1] BARDEEN, 1956, 1954 P C PHOT ATL CI

[2] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[3] HAYNES J, COMMUNICATION

[4] ANALYSIS OF INTRINSIC RECOMBINATION RADIATION FROM SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 392 - 396

[5] TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J]. PHYSICAL REVIEW, 1956, 101 (03): : 944 - 961

[6] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[7] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[8] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J]. PHYSICAL REVIEW, 1954, 93 (06): : 1204 - 1206