SHAPES OF 2-PHONON RECOMBINATION PEAKS IN SILICON

[1] PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1963, 130 (05): : 1667 - +

[2] Theory of Brilloum zones and symmetry properties of wave functions in crystals [J]. PHYSICAL REVIEW, 1936, 50 (01): : 58 - 67

[3] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[4] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &

[5] DOLLING G, 1965, INELASTIC SCATTERING, P249

[6] EFFECTIVE MASS APPROXIMATION FOR EXCITONS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 14 - 22

[7] FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 160 (03): : 649 - +

[8] 2-PHONON INDIRECT TRANSITIONS AND LATTICE SCATTERING IN SI [J]. PHYSICAL REVIEW, 1960, 118 (04): : 938 - 939

[9] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1384 - 1389

[10] ELECTRON-PHONON MATRIX ELEMENTS IN N-TYPE SILICON [J]. PHYSICS LETTERS A, 1968, A 27 (10) : 708 - &

[1] PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1963, 130 (05): : 1667 - +

[2] Theory of Brilloum zones and symmetry properties of wave functions in crystals [J]. PHYSICAL REVIEW, 1936, 50 (01): : 58 - 67

[3] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[4] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &

[5] DOLLING G, 1965, INELASTIC SCATTERING, P249

[6] EFFECTIVE MASS APPROXIMATION FOR EXCITONS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 14 - 22

[7] FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 160 (03): : 649 - +

[8] 2-PHONON INDIRECT TRANSITIONS AND LATTICE SCATTERING IN SI [J]. PHYSICAL REVIEW, 1960, 118 (04): : 938 - 939

[9] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1384 - 1389

[10] ELECTRON-PHONON MATRIX ELEMENTS IN N-TYPE SILICON [J]. PHYSICS LETTERS A, 1968, A 27 (10) : 708 - &