DEFECTS IN PLASMA-DEPOSITED A-SI-H

被引：228

作者：

KNIGHTS, JC

LUCOVSKY, G

NEMANICH, RJ

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1979年 / 32卷 / 1-3期

关键词：

D O I：

10.1016/0022-3093(79)90084-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The relationships between hydrogen vibrational spectra, electron spin densities and refractive index are investigated for a range of plasma-deposited amorphous silicon-hydrogen alloys. Results are also presented on the morphology of thick films as shown by scanning electron microscopy. A model is proposed for the structural origin of defects in these alloys based on voids that grow perpendicular to the film surface and are associated with coupled SiH2 units. © 1979.

引用

页码：393 / 403

页数：11

共 13 条

[1]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J].