DEFECTS IN PLASMA-DEPOSITED A-SI-H

被引:228
作者
KNIGHTS, JC
LUCOVSKY, G
NEMANICH, RJ
机构
[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304
关键词
D O I
10.1016/0022-3093(79)90084-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The relationships between hydrogen vibrational spectra, electron spin densities and refractive index are investigated for a range of plasma-deposited amorphous silicon-hydrogen alloys. Results are also presented on the morphology of thick films as shown by scanning electron microscopy. A model is proposed for the structural origin of defects in these alloys based on voids that grow perpendicular to the film surface and are associated with coupled SiH2 units. © 1979.
引用
收藏
页码:393 / 403
页数:11
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