PREFERENTIAL ATTACHMENT OF H IN AMORPHOUS HYDROGENATED BINARY SEMICONDUCTORS AND CONSEQUENT INFERIOR REDUCTION OF PSEUDOGAP STATE DENSITY

被引：141

作者：

PAUL, W

PAUL, DK

VONROEDERN, B

BLAKE, J

OGUZ, S

机构：

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 46卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.46.1016

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1016 / 1020

页数：5

共 13 条

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[10]

ZELLAMA FK, UNPUBLISHED

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