THERMAL NITRIDATION OF SILICON DIOXIDE FILMS

被引：121

作者：

HABRAKEN, FHPM ^{[1
]}

KUIPER, AET ^{[1
]}

TAMMINGA, Y ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.330046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6996 / 7002

页数：7

共 23 条

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[2]

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[4]

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[5]

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[6]

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[7] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS [J].

HABRAKEN, FHPM ;

KUIPER, AET ;

VANOOSTROM, A ;

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THEETEN, JB .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :404-415

[8]

HESS DW, 1975, J ELECTROCHEM SOC, V122, P1123, DOI 10.1149/1.2134407

[9] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS [J].

ITO, T ;

NOZAKI, T ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (09) :2053-2057

[10] DEUTERIUM AT THE SI-SIO2 INTERFACE DETECTED BY SECONDARY-ION MASS-SPECTROMETRY [J].

JOHNSON, NM ;

BIEGELSEN, DK ;

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EVANS, CA .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :995-997

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