ANALYSIS OF HEAT-TREATED 6H-SIC(0001) SURFACE USING SCANNING-TUNNELING-MICROSCOPY

被引：23

作者：

MARUMOTO, Y

TSUKAMOTO, T

HIRAI, M

KUSAKA, M

IWAMI, M

OZAWA, T

NAGAMURA, T

NAKATA, T

机构：

[1] UNISOKU CO LTD,HIRAKATA,OSAKA 57301,JAPAN

[2] ION ENGN RES INST CO,TSUDA,OSAKA 57301,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 6B期

关键词：

6H-SIC; SCANNING TUNNELING MICROSCOPY; STM; SUPERSTRUCTURE; RECONSTRUCTION;

D O I：

10.1143/JJAP.34.3351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A scanning tunneling microscopy in ultrahigh vacuum (UHV) has been used to study hexagonal (6H) silicon carbide (0001)Si face prepared by heat treatment. root 3 x root 3, 6 x 6 and 3 x 3 reconstructions were observed above 1100 degrees C. With increasing heat-treatment temperature, surface structure changed drastically and step heights decreased to that of a double layer. The 6 x 6 and 3 x 3 reconstructions can be explained as the structure of a graphite layer on the SiC surface and as the structure proposed by Kaplan, respectively.

引用

页码：3351 / 3353

页数：3

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