COMPARATIVE OXIDATION STUDIES OF SIC(0001) AND SIC(0001) SURFACES

被引：78

作者：

MUEHLHOFF, L ^{[1
]}

BOZACK, MJ ^{[1
]}

CHOYKE, WJ ^{[1
]}

YATES, JT ^{[1
]}

机构：

[1] UNIV PITTSBURGH,CTR SURFACE SCI,DEPT CHEM,PITTSBURGH,PA 15260

来源：

关键词：

D O I：

10.1063/1.337121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2558 / 2563

页数：6

共 14 条

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[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[3] Dillon J. A., 1960, SILICON CARBIDE HIGH, P235
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[5] THERMAL-OXIDATION OF 3C SILICON-CARBIDE SINGLE-CRYSTAL LAYERS ON SILICON
FUNG, CD
KOPANSKI, JJ
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (07) : 757 - 759
[6] HARRIS RCA, 1974, SILICON CARBIDE 1973
[7] JORGENSEN B, UNPUB J VAC SCI TECH
[8] THERMAL-OXIDATION OF SPUTTERED SILICON-CARBIDE THIN-FILMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : 1907 - 1914
[9] AUGER-ELECTRON SPECTROSCOPY AND SPUTTER AUGER ANALYSES OF THIN-FILMS OF SICX
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2108 - 2115
[10] MUEHLHOFF L, UNPUB J APPL PHYS