THERMAL-OXIDATION OF SPUTTERED SILICON-CARBIDE THIN-FILMS

被引：41

作者：

LU, WJ ^{[1
]}

STECKL, AJ ^{[1
]}

CHOW, TP ^{[1
]}

KATZ, W ^{[1
]}

机构：

[1] GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA

来源：

关键词：

D O I：

10.1149/1.2115988

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1907 / 1914

页数：8

共 25 条

[1] STRUCTURE OF CHEMICAL VAPOR-DEPOSITED SILICON-CARBIDE
CHIN, J
GANTZEL, PK
HUDSON, RG
[J]. THIN SOLID FILMS, 1977, 40 (JAN) : 57 - 72
[2] OXIDATION BEHAVIOR OF SILICON CARBIDE
ERVIN, G
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1958, 41 (09) : 347 - 352
[3] HARRIS RCA, 1974, SILICON CARBIDE 1973, P329
[4] SIC COATINGS FOR 1ST-WALL CANDIDATE MATERIALS BY RF SPUTTERING
HIROHATA, Y
KOBAYASHI, M
MAEDA, S
NAKAMURA, K
MOHRI, M
WATANABE, K
YAMASHINA, T
[J]. THIN SOLID FILMS, 1979, 63 (02) : 237 - 242
[5] LU W, UNPUB
[6] LU WJ, 1983, EL SOC EXT ABSTR, V83, P133
[7] MARSHALL RC, 1974, SILICON CARBIDE 1973, P668
[8] MUENCH MV, 1975, J ELECTROCHEM SOC, V122, P642
[9] EPITAXIAL DEPOSITION OF SILICON-CARBIDE FROM SILICON TETRACHLORIDE AND HEXANE
MUENCH, WV
PFAFFENEDER, I
[J]. THIN SOLID FILMS, 1976, 31 (1-2) : 39 - 51
[10] MUNCH WV, 1978, SOLID STATE ELECTRON, V21, P479, DOI 10.1016/0038-1101(78)90283-6