THERMAL-OXIDATION OF SPUTTERED SILICON-CARBIDE THIN-FILMS

被引:41
作者
LU, WJ [1 ]
STECKL, AJ [1 ]
CHOW, TP [1 ]
KATZ, W [1 ]
机构
[1] GE, CORP RES & DEV, SCHENECTADY, NY 12345 USA
关键词
D O I
10.1149/1.2115988
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1907 / 1914
页数:8
相关论文
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