OBSERVATIONS OF THE RAPID WITHDRAWAL OF STORED HOLES FROM GERMANIUM TRANSISTORS AND VARISTORS

被引:14
作者
MEACHAM, LA
MICHAELS, SE
机构
来源
PHYSICAL REVIEW | 1950年 / 78卷 / 02期
关键词
D O I
10.1103/PhysRev.78.175.2
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:175 / 176
页数:2
相关论文
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[1]   THEORY OF TRANSIENT PHENOMENA IN THE TRANSPORT OF HOLES IN AN EXCESS SEMICONDUCTOR [J].
HERRING, C .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :401-427
[2]   HOLE INJECTION IN GERMANIUM QUANTITATIVE STUDIES AND FILAMENTARY TRANSISTORS [J].
SHOCKLEY, W ;
PEARSON, GL ;
HAYNES, JR .
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :344-366