DEFECT STRUCTURES OF ION-IMPLANTED ALPHA-TIN

[1] Antoncik E., 1976, Hyperfine Interactions, V1, P329

[2] CALIBRATION OF ISOMER-SHIFT FOR SN-119 [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 79 (02): : 605 - 611

[3] Auble R. L., 1979, Nuclear Data Sheets, V26, P207, DOI 10.1016/0090-3752(79)80032-0

[4] VALENCE CHARGE-DENSITY IN GREY TIN - X-RAY DETERMINATION OF (222) FORBIDDEN REFLECTION AND ITS TEMPERATURE-DEPENDENCE [J]. PHYSICAL REVIEW B, 1975, 11 (02): : 793 - 797

[5] BRUYN JD, 1979, J PHYS-PARIS, V41, pY33

[6] ISOMER-SHIFTS OF I-129 IMPURITIES IMPLANTED IN SEMICONDUCTORS [J]. HYPERFINE INTERACTIONS, 1977, 5 (01): : 45 - 59

[7] THERMODYNAMIC AND OPTICAL PROPERTIES OF GERMANIUM SILICON DIAMOND AND GALLIUM ARSENIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 88 (560P): : 463 - +

[8] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE AND ELECTRON-NUCLEAR DOUBLE RESONANCE OF ARSENIC- AND ANTIMONY-VACANCY PAIRS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 881 - &

[9] LATTICE LOCATION OF TE IN LASER-ANNEALED TE-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2569 - 2571

[10] MOSSBAUER STUDIES OF IMPLANTED I-129 IONS IN SEMICONDUCTORS AND ALKALI-HALIDES [J]. PHYSICAL REVIEW B, 1973, 7 (07) : 3014 - 3027

[1] Antoncik E., 1976, Hyperfine Interactions, V1, P329

[2] CALIBRATION OF ISOMER-SHIFT FOR SN-119 [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 79 (02): : 605 - 611

[3] Auble R. L., 1979, Nuclear Data Sheets, V26, P207, DOI 10.1016/0090-3752(79)80032-0

[4] VALENCE CHARGE-DENSITY IN GREY TIN - X-RAY DETERMINATION OF (222) FORBIDDEN REFLECTION AND ITS TEMPERATURE-DEPENDENCE [J]. PHYSICAL REVIEW B, 1975, 11 (02): : 793 - 797

[5] BRUYN JD, 1979, J PHYS-PARIS, V41, pY33

[6] ISOMER-SHIFTS OF I-129 IMPURITIES IMPLANTED IN SEMICONDUCTORS [J]. HYPERFINE INTERACTIONS, 1977, 5 (01): : 45 - 59

[7] THERMODYNAMIC AND OPTICAL PROPERTIES OF GERMANIUM SILICON DIAMOND AND GALLIUM ARSENIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 88 (560P): : 463 - +

[8] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE AND ELECTRON-NUCLEAR DOUBLE RESONANCE OF ARSENIC- AND ANTIMONY-VACANCY PAIRS [J]. PHYSICAL REVIEW, 1968, 174 (03): : 881 - &

[9] LATTICE LOCATION OF TE IN LASER-ANNEALED TE-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2569 - 2571

[10] MOSSBAUER STUDIES OF IMPLANTED I-129 IONS IN SEMICONDUCTORS AND ALKALI-HALIDES [J]. PHYSICAL REVIEW B, 1973, 7 (07) : 3014 - 3027