MOSSBAUER STUDIES OF IMPLANTED I-129 IONS IN SEMICONDUCTORS AND ALKALI-HALIDES

[1] CHEMICAL SHIFTS OF MONOVALENT SUBSTITUTIONAL IONS IN ALKALI HALIDE CRYSTALS [J]. PHYSICS LETTERS A, 1968, A 27 (06) : 383 - +

[2] BARROS FDS, 1970, J CHEM PHYS, V52, P2865, DOI 10.1063/1.1673412

[3] BUKHSPAN S, 1968, J CHEM PHYS, V49, P5477

[4] BUKHSPAN S, 1969, J CHEM PHYS, V51, P3976

[5] OBSERVATION OF MOSSBAUER EFFECT FOLLOWING COULOMB EXCITATION OF 73GE [J]. PHYSICS LETTERS, 1966, 19 (08): : 673 - +

[6] DAVIDSON LA, 1970, ION IMPLANTATION

[7] LATTICE DISTORTIONS AND FIELD GRADIENTS IN ALKALI HALIDE SOLID SOLUTIONS [J]. PHYSICAL REVIEW, 1966, 145 (02): : 609 - &

[8] EISEN FH, 1970, ION IMPLANTATION

[9] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[10] CALCULATION AND INTERPRETATION OF 129I ISOMER SHIFTS IN ALKALI IODIDE LATTICES [J]. JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (03) : 789 - +

[1] CHEMICAL SHIFTS OF MONOVALENT SUBSTITUTIONAL IONS IN ALKALI HALIDE CRYSTALS [J]. PHYSICS LETTERS A, 1968, A 27 (06) : 383 - +

[2] BARROS FDS, 1970, J CHEM PHYS, V52, P2865, DOI 10.1063/1.1673412

[3] BUKHSPAN S, 1968, J CHEM PHYS, V49, P5477

[4] BUKHSPAN S, 1969, J CHEM PHYS, V51, P3976

[5] OBSERVATION OF MOSSBAUER EFFECT FOLLOWING COULOMB EXCITATION OF 73GE [J]. PHYSICS LETTERS, 1966, 19 (08): : 673 - +

[6] DAVIDSON LA, 1970, ION IMPLANTATION

[7] LATTICE DISTORTIONS AND FIELD GRADIENTS IN ALKALI HALIDE SOLID SOLUTIONS [J]. PHYSICAL REVIEW, 1966, 145 (02): : 609 - &

[8] EISEN FH, 1970, ION IMPLANTATION

[9] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[10] CALCULATION AND INTERPRETATION OF 129I ISOMER SHIFTS IN ALKALI IODIDE LATTICES [J]. JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (03) : 789 - +