LASER-ABLATION DEPOSITION OF CUINSE2 THIN-FILMS ON SILICON AND FUSED-SILICA

CuInSe2 thin films were deposited by an in situ process on fused silica and single crystal silicon substrates by pulsed laser ablation using a beam from an XeCl excimer laser focused on a polycrystalline target. The effect of deposition temperature and substrate material on the structure and orientation of the films was investigated. The structure and properties of the films were studied by X-ray diffraction, micro-Raman spectroscopy and scanning electron microscopy. The composition of the target material was largely maintained in the films deposited below 450-degrees-C. The films were highly oriented with the (I 12) planes of the chalcopyrite structure along the substrate surface, except for the films deposited above 350-degrees-C on to Si(100) which developed a {100} orientation.