DOPING EFFECT OF OXYGEN ON HORIZONTAL BRIDGMAN GROWN INP

被引:6
作者
PAK, K [1 ]
NAKANO, T [1 ]
NISHINAGA, T [1 ]
机构
[1] HITACHI CO LTD,CTR DEVICE DEV,KODAIRA,TOKYO,JAPAN
关键词
D O I
10.1143/JJAP.20.1815
中图分类号
O59 [应用物理学];
学科分类号
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页码:1815 / 1819
页数:5
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共 14 条
[1]  
ANTYPAS GA, 1977, I PHYS C SER B, V33, P55
[2]  
Barin I., 1973, THERMOCHEMICAL PROPE
[3]   SYSTEMATICS OF EVAPORATION COEFFICIENT AL2O3 GA2O3 IN2O3 [J].
BURNS, RP .
JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (09) :3307-+
[4]  
FAVENNEC PN, 1973, ION IMPLANTATION SEM, P621
[5]  
GIESSEN B, 1959, Z METALLKD, V50, P274
[6]  
KATAYAMA I, 1975, J JAPAN I METALS, V39, P990
[7]   THE SOLUBILITY OF SILICON AND GERMANIUM IN GALLIUM AND INDIUM [J].
KECK, PH ;
BRODER, J .
PHYSICAL REVIEW, 1953, 90 (04) :521-522
[8]  
MULLIN JB, 1973, I PHYS C SER, V17, P118
[9]   SYSTEM GA-AS-SN - INCORPORATION OF SN INTO GAAS [J].
PANISH, MB .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2659-2666
[10]   THERMODYNAMIC EVALUATION OF SIMPLE SOLUTION TREATMENT OF GA-P, IN-P AND GA-AS SYSTEMS [J].
PANISH, MB .
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :6-20