BREAKDOWN VOLTAGE OF DOUBLE-SIDED P-N-JUNCTIONS

被引：1

作者：

BROOK, P ^{[1
]}

机构：

[1] MINIST DEF,SERV ELECTR RES LAB,BALDOCK,HERTFORDSHIRE,ENGLAND

来源：

关键词：

D O I：

10.1109/T-ED.1974.18001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：730 / 731

页数：2

共 4 条

[1]

MOLL JL, 1964, PHYSICS SEMICONDUCTO

[2] DOUBLE-DRIFT-REGION (P+PNN+) AVALANCHE DIODE OSCILLATORS [J].

SCHARFET.DL ;

EVANS, WJ ;

JOHNSTON, RL .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (07) :1131-&

[3] AVALANCHE REGION WIDTH IN VARIOUS STRUCTURES OF IMPATT DIODES [J].

SCHROEDER, WE ;

HADDAD, GI .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1245-+

SZE, SM ;

GIBBONS, G .