AVALANCHE REGION WIDTH IN VARIOUS STRUCTURES OF IMPATT DIODES

被引：35

作者：

SCHROEDER, WE

HADDAD, GI

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1971年 / 59卷 / 08期

关键词：

D O I：

10.1109/PROC.1971.8372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1245 / +

页数：1

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