MICROWAVE SI AVALANCHE DIODE WITH NEARLY-ABRUPT-TYPE JUNCTION

被引：27

作者：

MISAWA, T

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1967.16006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：580 / +

页数：1

共 11 条

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[2] NOISE IN OSCILLATORS
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[3] IMPROVED PERFORMANCE OF MICROWAVE READ DIODES
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[4] NOISE SPECTRA OF READ DIODE AND GUNN OSCILLATORS
JOSENHANS, J
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1478 - +
[5] A 1/4- WATT SI PNUN X-BAND IMPATT (IMPACT AVALANCHE TRANSIT TIME) DIODE
MISAWA, T
MARINACCIO, LP
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (06): : 989 - +
[6] MISAWA T, 1966, IEEE T ELECTRON DEV, VED13, P143, DOI 10.1109/T-ED.1966.15648
[7] MISAWA T, 1965, OCT IEEE EL DEV M WA
[8] MISAWA T, TO BE PUBLISHED
[9] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T)
SZE, SM
GIBBONS, G
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 111 - &
[10] SZE SM, PRIVATE COMMUNICATIO