AVALANCHE TRANSIT-TIME MICROWAVE OSCILLATORS AND AMPLIFIERS

[1] DELOACH BC, 1964, IEEE T MICROW THEORY, VMT12, P15

[2] A SILICON DIODE MICROWAVE OSCILLATOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (02): : 369 - +

[3] READ DIODE-AN AVALANCHING TRANSIT-TIME NEGATIVE-RESISTANCE OSCILLATOR (SI IMPURITY EFFECTS E/T) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (05) : 89 - &

[4] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[5] MISAWA T, TO BE PUBLISHED

[6] OHM EA, 1956, IRE T MICROWAVE THOE, VMTT4, P210

[7] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 175 - 180

[8] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02): : 401 - 446

[9] SOME GENERAL PROPERTIES OF NONLINEAR ELEMENTS .2. SMALL SIGNAL THEORY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (05): : 850 - 860

[1] DELOACH BC, 1964, IEEE T MICROW THEORY, VMT12, P15

[2] A SILICON DIODE MICROWAVE OSCILLATOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (02): : 369 - +

[3] READ DIODE-AN AVALANCHING TRANSIT-TIME NEGATIVE-RESISTANCE OSCILLATOR (SI IMPURITY EFFECTS E/T) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (05) : 89 - &

[4] AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884

[5] MISAWA T, TO BE PUBLISHED

[6] OHM EA, 1956, IRE T MICROWAVE THOE, VMTT4, P210

[7] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 175 - 180

[8] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02): : 401 - 446

[9] SOME GENERAL PROPERTIES OF NONLINEAR ELEMENTS .2. SMALL SIGNAL THEORY [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (05): : 850 - 860