AVALANCHE BREAKDOWN IN READ DIODES AND PIN DIODES

[1] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[2] DELOACH BC, ADVANCES MICROWAVES

[3] GUMMEL H, TO BE PUBLISHED

[4] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +

[5] AVALANCHE BREAKDOWN IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241

[6] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 137 - +

[7] MISAWA T, 1966, IEEE T ELECTRON DEV, VED13, P143, DOI 10.1109/T-ED.1966.15648

[8] MOLL JL, 1964, PHYSICS SEMICONDUCTO

[9] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02): : 401 - 446

[10] EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (09) : 831 - &

[1] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &

[2] DELOACH BC, ADVANCES MICROWAVES

[3] GUMMEL H, TO BE PUBLISHED

[4] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +

[5] AVALANCHE BREAKDOWN IN GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241

[6] NEGATIVE RESISTANCE IN P-N JUNCTIONS UNDER AVALANCHE BREAKDOWN CONDITIONS .I. [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 137 - +

[7] MISAWA T, 1966, IEEE T ELECTRON DEV, VED13, P143, DOI 10.1109/T-ED.1966.15648

[8] MOLL JL, 1964, PHYSICS SEMICONDUCTO

[9] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02): : 401 - 446

[10] EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (09) : 831 - &