INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON - COMMENT

被引：7

作者：

IYER, SB

KUMAR, V

机构：

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 59卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.59.2115

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：2115 / 2115

页数：1

相关论文

共 7 条

[1] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM ;

HERRING, C ;

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1986, 56 (07) :769-772

[2] ELECTRIC-FIELD DEPENDENCE OF HYDROGEN NEUTRALIZATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :874-876

[3] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON - REPLY [J].

JOHNSON, NM ;

HERRING, C ;

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (18) :2116-2116

[4] EFFECT OF HYDROGEN ON SHALLOW DOPANTS IN CRYSTALLINE SILICON [J].

PANTELIDES, ST .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :995-997

[5] GENERATION-ANNEALING KINETICS AND ATOMIC MODELS OF A COMPENSATING DONOR IN THE SURFACE SPACE-CHARGE LAYER OF OXIDIZED SILICON [J].

SAH, CT ;

SUN, JYC ;

TZOU, JJT .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :944-956

[6] DEACTIVATION OF THE BORON ACCEPTOR IN SILICON BY HYDROGEN [J].

SAH, CT ;

SUN, JY ;

TZOU, JJ .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :204-206

[7]

SANKARNARAYAN EM, IN PRESS