DISLOCATION-STRUCTURE, FORMATION, AND MINORITY-CARRIER RECOMBINATION IN ALGAAS/INGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：28

作者：

FITZGERALD, EA ^{[1
]}

AST, DG ^{[1
]}

ASHIZAWA, Y ^{[1
]}

AKBAR, S ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2473 / 2487

页数：15

共 20 条

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[7] THE IDENTIFICATION OF DARK-LINE DEFECTS IN ALGAAS/INGAAS/GAAS HETEROSTRUCTURES [J].

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[9] ELIMINATION OF INTERFACE DEFECTS IN MISMATCHED EPILAYERS BY A REDUCTION IN GROWTH AREA [J].

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