INFRARED-ABSORPTION AND THERMAL EVOLUTION STUDY OF HYDROGEN-BONDING IN A-SIH

被引：37

作者：

MALEY, N ^{[1
]}

MYERS, A ^{[1
]}

PINARBASI, M ^{[1
]}

LEET, D ^{[1
]}

ABELSON, JR ^{[1
]}

THORNTON, JA ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576266

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1267 / 1272

页数：6

共 19 条

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[4] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[5] THE RELATION BETWEEN MICROSTRUCTURE AND HYDROGEN CONTENT AND EVOLUTION FOR HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY MAGNETRON SPUTTERING
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[6] HYDROGEN CONTENT OF A-GE-H AND A-SI-H AS DETERMINED BY IR SPECTROSCOPY, GAS EVOLUTION AND NUCLEAR-REACTION TECHNIQUES
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[7] FRITZSCHE H, 1977, 7TH P INT C AM LIQ S, P3
[8] STUDIES OF THE OSCILLATOR-STRENGTHS OF INFRARED VIBRATIONAL-MODES IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON
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ODEH, IM
THOMAS, MJK
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 104 (02): : 607 - 612
[9] MICROSTRUCTURE OF PLASMA-DEPOSITED A-SI-H FILMS
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[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 244 - 246
[10] HYDROGEN IN AMORPHOUS-SEMICONDUCTORS
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[J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1980, 9 (03): : 211 - 283

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