ORIGIN OF DEFECTS IN (111) HGTE GROWN BY MOLECULAR-BEAM EPITAXY

被引：5

作者：

FELDMAN, RD ^{[1
]}

NAKAHARA, S ^{[1
]}

OPILA, RL ^{[1
]}

AUSTIN, RF ^{[1
]}

BOONE, T ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 04期

关键词：

D O I：

10.1016/0022-0248(89)90294-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：581 / 589

页数：9

共 13 条

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[3]

FAURIE JP, 1986, J CRYST GROWTH, V79, P940

[4] DEFECTS IN (111) HGTE GROWN BY MOLECULAR-BEAM EPITAXY [J].

FELDMAN, RD ;

NAKAHARA, S ;

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[5] VERY HIGH MOBILITY HGTE FILMS GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

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[6] INFLUENCE OF GA-AS-TE INTERFACIAL PHASES ON THE ORIENTATION OF EPITAXIAL CDTE ON GAAS [J].

FELDMAN, RD ;

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KISKER, DW ;

JEFFERS, KS ;

BRIDENBAUGH, PM .

APPLIED PHYSICS LETTERS, 1986, 48 (03) :248-250

[7] THE EFFECT OF CDTE SUBSTRATE ORIENTATION ON THE MOVPE GROWTH OF CDXHG1-XTE [J].

HAILS, JE ;

RUSSELL, GJ ;

BRINKMAN, AW ;

WOODS, J .

JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :940-945

[8] X-RAY-OBSERVATION OF TWIN FAULTS IN (1,1,1) CDTE EPITAXIAL LAYERS AND IN (1,1,1) HG1-XXXTE/CDTE SUPERLATTICES [J].

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STAUDENMANN, JL .

APPLIED PHYSICS LETTERS, 1986, 49 (23) :1590-1592

[9] CRYSTAL ORIENTATION OF CDTE FILM ON GAAS BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2137-2140

[10] HIGH-RESOLUTION ELECTRON-MICROSCOPE STUDY OF EPITAXIAL CDTE-GAAS INTERFACES [J].

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APPLIED PHYSICS LETTERS, 1985, 46 (09) :860-862

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