HIGH-RESOLUTION ELECTRON-MICROSCOPE STUDY OF EPITAXIAL CDTE-GAAS INTERFACES

被引：116

作者：

OTSUKA, N ^{[1
]}

KOLODZIEJSKI, LA ^{[1
]}

GUNSHOR, RL ^{[1
]}

DATTA, S ^{[1
]}

BICKNELL, RN ^{[1
]}

SCHETZINA, JF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,SCH MAT ENGN,DEPT PHYS,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.95865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：860 / 862

页数：3

共 16 条

[1] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
BICKNELL, RN
YANKA, RW
GILES, NC
SCHETZINA, JF
MAGEE, TJ
LEUNG, C
KAWAYOSHI, H
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 313 - 315
[2] HETEROEPITAXIAL GROWTH OF CDTE ON GAAS BY LASER ASSISTED DEPOSITION
CHEUNG, JT
KHOSHNEVISAN, M
MAGEE, T
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 462 - 464
[3] CHEUNG JT, COMMUNICATION
[4] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001)
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2841 - 2843
[5] MBE GROWTH OF (HG, CD, AND TE) COMPOUNDS
CHOW, PP
GREENLAW, DK
JOHNSON, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 562 - 563
[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001)
FARROW, RFC
JONES, GR
WILLIAMS, GM
YOUNG, IM
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 954 - 956
[7] CDTE-HGTE MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
FAURIE, JP
MILLION, A
PIAGUET, J
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 713 - 715
[8] MOLECULAR-BEAM EPITAXY OF CD1-XMNXTE
KOLODZIEJSKI, LA
SAKAMOTO, T
GUNSHOR, RL
DATTA, S
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 799 - 801
[9] MOLECULAR-BEAM EPITAXY OF DILUTED MAGNETIC SEMICONDUCTOR (CD1-XMNXTE) SUPERLATTICES
KOLODZIEJSKI, LA
BONSETT, TC
GUNSHOR, RL
DATTA, S
BYLSMA, RB
BECKER, WM
OTSUKA, N
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 440 - 442
[10] CDTE-FILMS ON (001) GAAS CR BY MOLECULAR-BEAM EPITAXY
MAR, HA
CHEE, KT
SALANSKY, N
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 237 - 239

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