AN MO GATE 4K STATIC MOS RAM

被引：8

作者：

ISHIKAWA, H ^{[1
]}

YAMAMOTO, M ^{[1
]}

TOKUNAGA, H ^{[1
]}

TOYOKURA, N ^{[1
]}

YANAGAWA, F ^{[1
]}

KIUCHI, K ^{[1
]}

KONDO, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期

关键词：

D O I：

10.1109/T-ED.1980.20074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1586 / 1590

页数：5

共 11 条

[1]

BROWN DM, 1966, J ELECTROCHEM SOC, V115, P874

[2] APPLICATION OF TRIANGULAR VOLTAGE SWEEP METHOD TO MOBILE CHARGE STUDIES IN MOS STRUCTURES [J].

CHOU, NJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :601-&

[3]

ISHIKAWA H, 1979, 155TH EL SOC M, V79, P406

[4]

ISHIKAWA HA, UNPUBLISHED

[5]

KONDO M, 1978, 1978 ISSCC DIG TECH, P158

[6]

KOYANAGI M, 1979, 155TH EL SOC M, V79, P409

[7]

OHGISHI T, 1978, 1978 ISSCC DIG TECH, P198

[8] REFRACTORY-METAL GATE PROCESSES FOR VLSI APPLICATIONS [J].

SHAH, PL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :631-640

[9] CONTROL OF RESISTIVITY, MICROSTRUCTURE, AND STRESS IN ELECTRON-BEAM EVAPORATED TUNGSTEN FILMS [J].

SINHA, AK ;

SMITH, TE ;

SHENG, TT ;

AXELROD, NN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (03) :436-444

[10]

YANAGAWA F, 1979, 1979 INT EL DEV M IE, P362

← 1 2 →