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PREDICTION OF IMPACT-IONIZATION-INDUCED SNAP-BACK IN ADVANCED SI N-P-N BJTS BY MEANS OF A NONLOCAL ANALYTICAL MODEL FOR THE AVALANCHE MULTIPLICATION FACTOR

被引：17
作者：
VERZELLESI, G
BACCARANI, G
CANALI, C
PAVAN, P
VENDRAME, L
ZANONI, E
机构：
[1] UNIV BOLOGNA,DIPARTIMENTO ELETTR INFORMAT & SISTEMIST,I-40136 BOLOGNA,ITALY
[2] UNIV MODENA,FAC INGN,I-41100 MODENA,ITALY
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 12期
关键词：
D O I：
10.1109/16.249478
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Assuming a triangular shape for the electric field in the base-collector space-charge region of an n-p-n Si BJT enables the electron mean energy to be calculated analytically from a simplified energy-balance equation. On this basis a nonlocal impact-ionization model, suitable for computer-aided circuit simulation, has been obtained and used to calculate the output characteristics at constant emitter-base voltage (grounded base) of advanced devices. Provided the experimental bias-dependent value of the base parasitic resistance is accounted for in the device model, the base-collector voltage at which impact-ionization-induced snap-back occurs can be accurately predicted.
引用
收藏
页码：2296 / 2300
页数：5
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