COLLECTOR BASE JUNCTION AVALANCHE EFFECTS IN ADVANCED DOUBLE-POLY SELF-ALIGNED BIPOLAR-TRANSISTORS

被引：94

作者：

LU, PF

CHEN, TC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/16.24366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1182 / 1188

页数：7

共 13 条

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