A REDUCED-FIELD DESIGN CONCEPT FOR HIGH-PERFORMANCE BIPOLAR-TRANSISTORS

被引：17

作者：

TANG, DD

LU, PF

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 02期

关键词：

D O I：

10.1109/55.32431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：67 / 69

页数：3

共 13 条

[1] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM [J].

BUTURLA, EM ;

COTTRELL, PE ;

GROSSMAN, BM ;

SALSBURG, KA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) :218-231

[2] FORWARD-BIAS TUNNELING - A LIMITATION TO BIPOLAR DEVICE SCALING [J].

DELALAMO, JA ;

SWANSON, RM .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :629-631

[3] INHERENT AND STRESS-INDUCED LEAKAGE IN HEAVILY DOPED SILICON JUNCTIONS [J].

HACKBARTH, E ;

TANG, DD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2108-2118

[4]

JEONG H, 1988, 1988 P BIP CIRC TECH, P107

[5] A GENERAL CONTROL-VOLUME FORMULATION FOR MODELING IMPACT IONIZATION IN SEMICONDUCTOR TRANSPORT [J].

LAUX, SE ;

GROSSMAN, BM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) :2076-2082

[6]

LU PF, UNPUB IEEE T ELECTRO

[7] A COMPARISON OF SEMICONDUCTOR-DEVICES FOR HIGH-SPEED LOGIC [J].

SOLOMON, PM .

PROCEEDINGS OF THE IEEE, 1982, 70 (05) :489-509

[8]

SOLOMON PM, 1979, ISSCC, P86

[9] TUNNELING IN BASE-EMITTER JUNCTIONS [J].

STORK, JMC ;

ISAAC, RD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1527-1534

[10]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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