FORWARD-BIAS TUNNELING - A LIMITATION TO BIPOLAR DEVICE SCALING

被引：81

作者：

DELALAMO, JA ^{[1
]}

SWANSON, RM ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD,CA 94305

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 11期

关键词：

D O I：

10.1109/EDL.1986.26499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：629 / 631

页数：3

相关论文

共 14 条

[1] DEPENDENCE OF PEAK CURRENT DENSITY ON ACCEPTOR CONCENTRATION IN GERMANIUM TUNNEL DIODES
BUTCHER, PN
HULME, KF
MORGAN, JR
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 358 - &
[2] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS
CHYNOWETH, A
LOGAN, RA
FELDMANN, WL
[J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &
[3] SELF-ALIGNED TRANSISTORS WITH POLYSILICON EMITTERS FOR BIPOLAR VLSI
CUTHBERTSON, A
ASHBURN, P
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 242 - 247
[4] del Alamo J., 1985, P INT EL DEV M, P290
[5] FABRICATION AND CHARACTERIZATION OF EPITAXIAL HEAVILY PHOSPHORUS-DOPED SILICON
DELALAMO, JA
SWANSON, RM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (12) : 3011 - 3016
[6] DELAMAMO JA, 1986, 18TH P C SOL STAT DE, P283
[7] HACKBARTH E, 1986, 44TH DEV RES C BOST
[8] BAND TAILS IN SEMICONDUCTORS
KANE, EO
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (1-2) : 3 - 10
[9] BAND-GAP NARROWING IN THE SPACE-CHARGE REGION OF HEAVILY DOPED SILICON DIODES
LOWNEY, JR
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (1-2) : 187 - 191
[10] NING TH, 1984, 16TH INT C SOL STAT, P205