BAND TAILS IN SEMICONDUCTORS

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892

[2] HOLE AND ELECTRON MOBILITIES IN HEAVILY DOPED SILICON - COMPARISON OF THEORY AND EXPERIMENT [J]. SOLID-STATE ELECTRONICS, 1983, 26 (12) : 1157 - 1166

[3] BONCHBRUEVICH VL, 1962, JUL P INT C PHYS SEM, P216

[4] Brooks H., 1955, ADV ELECTRON, V7, P85

[5] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 250 - 257

[6] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[7] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17): : 2369 - +

[8] Efros A. L., 1974, SOV PHYS USP, V16, P789

[9] EFROS AL, 1973, USP FIZ NAUK+, V111, P451

[10] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892

[2] HOLE AND ELECTRON MOBILITIES IN HEAVILY DOPED SILICON - COMPARISON OF THEORY AND EXPERIMENT [J]. SOLID-STATE ELECTRONICS, 1983, 26 (12) : 1157 - 1166

[3] BONCHBRUEVICH VL, 1962, JUL P INT C PHYS SEM, P216

[4] Brooks H., 1955, ADV ELECTRON, V7, P85

[5] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 250 - 257

[6] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[7] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17): : 2369 - +

[8] Efros A. L., 1974, SOV PHYS USP, V16, P789

[9] EFROS AL, 1973, USP FIZ NAUK+, V111, P451

[10] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604