HEAVILY DOPED SEMICONDUCTORS AND DEVICES

被引：286

作者：

ABRAM, RA ^{[1
]}

REES, GJ ^{[1
]}

WILSON, BLH ^{[1
]}

机构：

[1] PLESSEY RES CASWELL LTD, ALLEN CLARK RES CTR, TOWCESTER, NORTHAMPTONSHIR, ENGLAND

来源：

ADVANCES IN PHYSICS | 1978年 / 27卷 / 06期

关键词：

BIPOLAR TRANSISTORS - INJECTION LASERS;

D O I：

10.1080/00018737800101484

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：799 / 892

页数：94

共 282 条

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MISTRY, D .

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[7] ELECTROMAGNETIC THEORY OF HETEROSTRUCTURE INJECTION LASERS [J].

ADAMS, MJ ;

CROSS, M .

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[10]

ALFEROV ZI, 1973, SOV PHYS SEMICOND+, V6, P1718

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