BAND-GAP NARROWING IN THE SPACE-CHARGE REGION OF HEAVILY DOPED SILICON DIODES

被引：21

作者：

LOWNEY, JR

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 1-2期

关键词：

D O I：

10.1016/0038-1101(85)90229-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：187 / 191

页数：5

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共 10 条

[1] STATISTICAL COMPARISONS OF DATA ON BAND-GAP NARROWING IN HEAVILY DOPED SILICON - ELECTRICAL AND OPTICAL MEASUREMENTS
BENNETT, HS
WILSON, CL
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3582 - 3587
[2] TRANSITION REGION CAPACITANCE OF DIFFUSED P-N JUNCTIONS
CHAWLA, BR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (03) : 178 - &
[3] Forsythe G., 1967
[4] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS
HALPERIN, BI
LAX, M
[J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +
[5] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE
KANE, EO
[J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &
[6] THE MODIFICATION OF ELECTRON ENERGY LEVELS BY IMPURITY ATOMS
KLAUDER, JR
[J]. ANNALS OF PHYSICS, 1961, 14 (01) : 43 - 76
[7] EVIDENCE OF BANDGAP-NARROWING IN THE SPACE-CHARGE LAYER OF HEAVILY DOPED SILICON DIODES
LOWNEY, JR
THURBER, WR
[J]. ELECTRONICS LETTERS, 1984, 20 (03) : 142 - 143
[8] COMPARISON OF MODELS OF THE BUILT-IN ELECTRIC-FIELD IN SILICON AT HIGH DONOR DENSITIES
LOWNEY, JR
GEIST, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3624 - 3627
[9] FROM BAND TAILING TO IMPURITY-BAND FORMATION AND DISCUSSION OF LOCALIZATION IN DOPED SEMICONDUCTORS - A MULTIPLE-SCATTERING APPROACH
SERRE, J
GHAZALI, A
[J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4704 - 4715
[10] SZE SM, 1981, PHYSICS SEMICONDUCTO