COMPARISON OF MODELS OF THE BUILT-IN ELECTRIC-FIELD IN SILICON AT HIGH DONOR DENSITIES

被引：7

作者：

LOWNEY, JR

GEIST, JC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3624 / 3627

页数：4

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