AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON

被引:570
作者
DZIEWIOR, J
SCHMID, W
机构
[1] UNIV STUTTGART,INST PHYSIKAL,D-7000 STUTTGART 80,FED REP GER
[2] AEG TELEFUNKEN,RES INST,FRANKFURT,FED REP GER
关键词
D O I
10.1063/1.89694
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:346 / 348
页数:3
相关论文
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