AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON

被引：570

作者：

DZIEWIOR, J

SCHMID, W

机构：

[1] UNIV STUTTGART,INST PHYSIKAL,D-7000 STUTTGART 80,FED REP GER

[2] AEG TELEFUNKEN,RES INST,FRANKFURT,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 05期

关键词：

D O I：

10.1063/1.89694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：346 / 348

页数：3

共 23 条

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[18]

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[19] FORMATION AND DECAY OF ELECTRON-HOLE DROPS IN SI [J].

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[20]

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