FORMALISM FOR INDIRECT AUGER EFFECT .1.

[1] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[2] AUGER-RECOMBINATION IN SI [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (01) : 93 - 95

[3] ELECTRON-HOLE DROPS IN GE-SI ALLOYS [J]. PHYSICAL REVIEW B, 1974, 10 (12) : 4995 - 5002

[4] BLINOV LM, 1968, SOV PHYS SEMICOND+, V1, P1124

[5] BLINOV LM, 1968, FIZ TVERD TELA+, V9, P2537

[6] BOBROVA EA, 1972, SOV PHYS SOLID STATE, V13, P2982

[7] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[8] MINORITY CARRIER LIFETIME IN HIGHLY DOPED GE [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (03) : 321 - +

[9] INDIRECT BAND-TO-BAND AUGER RECOMBINATION IN GE [J]. PHYSICAL REVIEW LETTERS, 1968, 20 (01) : 8 - +

[10] INDIRECT BAND TO BAND AUGER-RECOMBINATION IN GERMANIUM [J]. ZEITSCHRIFT FUR PHYSIK, 1968, 209 (05): : 445 - &

[1] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[2] AUGER-RECOMBINATION IN SI [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (01) : 93 - 95

[3] ELECTRON-HOLE DROPS IN GE-SI ALLOYS [J]. PHYSICAL REVIEW B, 1974, 10 (12) : 4995 - 5002

[4] BLINOV LM, 1968, SOV PHYS SEMICOND+, V1, P1124

[5] BLINOV LM, 1968, FIZ TVERD TELA+, V9, P2537

[6] BOBROVA EA, 1972, SOV PHYS SOLID STATE, V13, P2982

[7] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[8] MINORITY CARRIER LIFETIME IN HIGHLY DOPED GE [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (03) : 321 - +

[9] INDIRECT BAND-TO-BAND AUGER RECOMBINATION IN GE [J]. PHYSICAL REVIEW LETTERS, 1968, 20 (01) : 8 - +

[10] INDIRECT BAND TO BAND AUGER-RECOMBINATION IN GERMANIUM [J]. ZEITSCHRIFT FUR PHYSIK, 1968, 209 (05): : 445 - &