INDIRECT BAND TO BAND AUGER-RECOMBINATION IN GERMANIUM

被引：16

作者：

CONRADT, R

机构：

来源：

ZEITSCHRIFT FUR PHYSIK | 1968年 / 209卷 / 05期

关键词：

D O I：

10.1007/BF01380550

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：445 / &

共 13 条

[1] AUGER EFFECT IN SEMICONDUCTORS
BEATTIE, AR
LANDSBERG, PT
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29
[2] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION
BEATTIE, AR
SMITH, G
[J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &
[3] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN GERMANIUM PARA-NORMAL JUNCTIONS
CHYNOWETH, AG
GUMMEL, HK
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 191 - &
[4] GERMANIUM - SEMICONDUCTOR PROPERTIES
DALVEN, R
[J]. INFRARED PHYSICS, 1966, 6 (03): : 129 - &
[5] VERTEILUNGSFUNKTION UND DRIFTGESCHWINDIGKEIT WARMER ELEKTRONEN IN GERMANIUM
FRANZ, W
MIOSGA, P
[J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 597 - &
[6] HAITZ RH, 1963, THESIS MUNCHEN
[7] THRESHOLD ENERGY FOR AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
HAUSER, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 507 - &
[8] HAYNES JR, 1964, 7 INT C PHYS SEM PAR, V4, P21
[9] KARPOVA IV, 1962, INT C PHYS SEMICOND, P880
[10] INFRARED DETECTION BY AVALANCHE DISCHARGE IN SILICON P-N JUNCTIONS
KEIL, G
BERNT, H
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (04) : 321 - +