AUGER RECOMBINATION IN SWAMPED MIDDLE REGION OF SILICON RECTIFIERS AND THYRISTORS

被引：26

作者：

KRAUSSE, J ^{[1
]}

机构：

[1] SIEMENS AG,FRANKFURTER RING 152,8 MUNICH 46,WEST GERMANY

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 05期

关键词：

D O I：

10.1016/0038-1101(74)90071-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：427 / 429

页数：3

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[1] AUGER-RECOMBINATION IN SI
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[2] SPATIAL-DISTRIBUTION OF RECOMBINATION IN ALLOYED SILICON-PSN-RECTIFIERS BY LOADING IN A FORWARD DIRECTION
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[4] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES
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[5] DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .2.
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[6] MEASUREMENT OF CONCENTRATION DISTRIBUTION OF CHARGE-CARRIERS IN MIDDLE REGION OF ALLOYED SILICON PSN RECTIFIER LOADED FORWARDLY
KRAUSSE, J
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (08) : 841 - &
[7] KRAUSSE J, TO BE PUBLISHED
[8] SPECTRUM AND DECAY OF RECOMBINATION RADIATION FROM STRONGLY EXCITED SILICON
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[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (01) : 155 - +