EFFECT OF BAND-GAP NARROWING ON THE BUILT-IN ELECTRIC-FIELD IN N-TYPE SILICON

被引：7

作者：

GEIST, J

LOWNEY, JR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.328841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1121 / 1123

页数：3

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