ENERGY-GAP IN SI AND GE - IMPURITY DEPENDENCE

被引：245

作者：

MAHAN, GD ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 05期

关键词：

D O I：

10.1063/1.327994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2634 / 2646

页数：13

共 28 条

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[8] EFFECT OF ELECTRON INTERACTION ON BAND-GAP OF EXTRINSIC SEMICONDUCTORS [J].

INKSON, JC .

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[9] CALCULATION OF FERMI LEVEL, MINORITY-CARRIER CONCENTRATION, EFFECTIVE INTRINSIC CONCENTRATION, AND EINSTEIN RELATION IN N-TYPE AND P-TYPE GERMANIUM AND SILICON [J].

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[10]

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