CALCULATION OF FERMI LEVEL, MINORITY-CARRIER CONCENTRATION, EFFECTIVE INTRINSIC CONCENTRATION, AND EINSTEIN RELATION IN N-TYPE AND P-TYPE GERMANIUM AND SILICON

被引：23

作者：

JAIN, RK ^{[1
]}

机构：

[1] CATHOLIC UNIV LEUVEN,DEPT ELEKTROTECH,VANDEHALFGELEIDERS FYS & ELEKTR LAB,B-3030 HEVERLE,BELGIUM

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 42卷 / 01期

关键词：

D O I：

10.1002/pssa.2210420123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：221 / 226

页数：6

共 34 条

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